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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5199
DESCRIPTION *With TO-3PL package *Complement to type 2SA1942 APPLICATIONS *Power amplifier applications *Recommended for 80W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 160 160 5 12 1.2 120 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A; IB=0.8A IC=6A ; VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 55 35 30 170 MIN 160 TYP.
2SC5199
MAX
UNIT V
2.5 1.5 5 5 160
V V A A
MHz pF
hFE-1 classifications R 55-110 O 80-160
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5199
Fig.2 Outline dimensions (unindicated tolerance:0.50 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5199
4


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